国家/地区 台湾（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/02（3） C30B029/02（3） B82Y040/00（2）
C01B031/04（2） C30B029/64（2） H01L021/20（2）
发明人
公开年 2012（2） 2013（2）
申请年 2012（4）
专利权人

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J