国家/地区 世界知识产权组织（50）
IPC部 C（50）
IPC大类 C01（50） B82（45） H01（34）
B32（16） C23（14） C08（11）
B01（9） C09（9） B05（8）
C07（7） C30（7） C25（4）
C03（3） D01（3） G01（3）
IPC小类 C01B（50）
IPC C01B031/02（50）
发明人 KIM H K（4） VEERASAMY V（4） VEERASAMY V S（4）
BAE S K（3） GANG B S（3） GEUN K H（3）
HONG B H（3） HUI H B（3） KIM J（3）
TOUR J M（3） ABDELSAYED V（2） AHN J（2）
ALOTHMAN Z A M（2） BAE S（2） ELSHALL M S（2）
公开年 2011（50）
申请年 2010（21）  2011（18）  2009（11） 
专利权人 GUARDIAN GLA.（4） GUARDIAN IND（4） GUARDIAN IND.（4） GRAPHENE SQU.（3）
UNIV RICE WI.（3） UNIV SUNGKYU.（3） ABDELSAYED V（2） AHN J（2）
ALOTHMAN Z A.（2） BAE S（2） BAYER TECHNO.（2） ELSHALL M S（2）
HONG B H（2） KIM H K（2） RUOFF R S（2） SUH K S（2）
UNIV MANCHES.（2） UNIV SINGAPO.（2） UNIV SINGAPO.（2） UNIV TEXAS S.（2）

Forming graphene used in e.g. bioanalytics involves providing graphite sample having atomic layers of carbon; introducing solvent and ions into spaces between the atomic layers; expanding space; and separating the layers using driving force.

LOH K P, WANG J, JUNZHONG B, LOH K, LUO J, ZUNZHONG W

Forming graphene thin films/functionalized graphene coatings, comprises providing conducting substrate and electrophoretically forming graphene or functionalized graphene using solution comprising e.g. exfoliated graphene sheets.

BANERJEE S, WHITTAKER L, LEE V, WHITAKER L

New functionalized graphene compound comprising graphene and fluorine having specific fluorine to carbon ratio used as structural material, electronic component, optical component, magnetic component or coating.

GEIM A, RAVEENDRANNAIR R, NOVOSELOV K, RAEBINDEURAN N R, RAVEENDRAN N R

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Composition, useful in e.g. high speed transistors, electronic devices, sensors, solar cells, optoelectronic devices, logic devices, ultra capacitors, and actuators, comprises unaffixed graphene particulates.

BERRY V, MOHANTY N, MOORE D S

Preparation of graphene-type conductive material involves applying oxide graphene sol and metal salt solution and/or metal colloidal solution on substrate layer, separating, forming solid film and treating at specified condition.

LIANG M, ZHI L

Article e.g. photodetector, comprises graphene layer having work function and metal oxide film having work function greater than work function of graphene layer, formed on graphene layer.

CHEN W, CHEN Z, WEE T S A, XIE L, WANG X, SUN J, ARIANDO, HWANG J, CHEN V, CHEN ZH, WEE T SH A, SUN Y

Electrostatic production of graphene from graphite by initial charging of graphite crystal to several million volts.

KOGAN A Y

Producing two-dimensional nano-materials, useful in sensors, comprises adding sol precursor compound to mixture of graphene oxide particles or graphene particles and surfactant, reacting mixture in sol-gel process, and optionally heating.

IVANOVICI S, YANG S, FENG X, MUELLEN K, BIN Y S, KLAUS M

Producing graphene, useful for catalyzing chemical cross-coupling of at least two reactants of interest, comprises irradiating solid graphite oxide or a solution of graphite oxide with microwave radiation.

ELSHALL M S, ABDELSAYED V, HASSAN H M A, KHDER A E R S, ABOUZELD K M, DAI Q, AFSHANI P, GUPTON F, SIAMAKI A R, ALOTHMAN Z A M, ALKHATHLAN H Z, ABOUZEID K M