国家/地区 中国（4） 美国（3） 欧洲专利局（EPO）（2） 日本（2） 世界知识产权组织（2）
IPC部 C（6）
IPC大类 C04（6）
IPC小类 C04B（6）
IPC B01J003/06（2） C04B035/52（2） C04B035/565（2）
C04B035/645（2） C30B035/00（2）
发明人
公开年 2021（6）
申请年 2020（4）  2021（2） 
专利权人

Preparation of graphite thermal field material surface-coated with tantalum carbide coating for high temperature third-generation semiconductor crystal growth furnace, involves high-pressure water treating graphite surface, plasma spraying tantalum powder, infiltrating graphite, and carbonizing.

TANG B, WU X

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Composition used for manufacturing composite polycrystalline diamond, comprises diamond particle(s), boron-doped diamond particle(s), and preset amount of additive containing boron oxide powder, and nano-carbon material.

CHEN W, PAN P, SUN Y

Sp2-sp3 hybrid crystalline boron nitride has basic structural unit composed of sp2 hybridized graphite-like structural unit and sp3 hybridized diamond-like structural unit, where the two types of units are connected via coherent interface.

ZHAO Z, LUO K, SUN L, LIU B, HU W, HE J, YU D, TIAN Y, XU B, LIU Z, ZHAO Z S, HU W T, HE J L, YU D L, TIAN Y J, LIU Z Y

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Graphene-reinforced silicon carbide heating rod comprises silicon carbide, graphene oxide boron, boron carbide, surfactant and binder in cold area and silicon carbide, boron carbide, surfactant and binder in hot zone.

SHEN L, DAI P, JI C, WANG Y