国家/地区 美国（3）
IPC部 C（3）
IPC大类 C07（3）
IPC小类 C07D（3）
IPC H01L021/02（3）
发明人
公开年 2014（2）
申请年 2013（2） 
专利权人

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Composite material for manufacturing capacitor device such as memory device, capacitor, transistor or diode, comprises polymeric material and hydrazine-reduced graphene oxide.

ALMADHOUN M N, ALSHAREEF H N, BHANSALI U S, XAVIER P, ODEH I N, ALMADHOUN M, MADHOUN M, SHARIF H A, BHANSALI Y S, EXAER P

Modified graphene comprising sp3 orbital, useful in e.g. spintronics device, magneto-electronic device, wafer, ferromagnetic semiconductor, and field effect transistor, and as room temperature ferromagnetic semiconductor.

BEKYAROVA E, HADDON R C, HONG J, ITKIS M E, KHIZROEV S, RAMESH P