国家/地区 中国（3） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C01（4） C10（4） B82（2）
H01（2）
IPC小类 C01B（4）
IPC C01B032/186（4）
发明人
公开年 2021（2）
申请年 2020（3） 
专利权人

Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial, is embedded with seed crystals containing seeds oriented in preset direction or seed crystals single crystallized in preset direction.

PARK H B, ROH J S, JANG J K, CHANG J K

Treatment of waste e.g. plastic waste, involves heating and pyrolyzing waste in presence of inert gas and carbon dioxide, catalytically dry reforming hydrocarbon mixture, and forming carbon nanomaterial from carbon monoxide and hydrogen.

LI F Y S, LIN X, LI F

Preparing graphene film, by transforming coal into semi-coke and high-temperature volatile products, separating volatile products and passing vapor phase light component to chemical vapor deposition method graphene growth reaction system.

LI C, LUO Z, FANG M, CEN J

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y