国家/地区 中国（3）
IPC部 C（3）
IPC大类 C21（3）
IPC小类 C21D（3）
IPC C23F017/00（3）
发明人
公开年 2021（2）
申请年 2021（2） 
专利权人

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z

Method for processing high-strength corrosion-resistant stainless steel pipe fittings, involves taking pretreatment pipe fittings, performing ultrasonic rolling on outer surface, washing pretreatment pipe fittings with deionized water after rolling and vacuum drying pretreatment pipe fittings.

XU J, HU X, SANG C, RUAN J, ZHOU Q

Method for reducing resistivity of single crystal copper wire, involves annealing single crystal copper under non-oxidizing gas and protective gas atmosphere, introducing carbon-containing gas into copper wire, reacting and cooling.

NOVOSELOV K