国家/地区 日本（3） 美国（3） 台湾（2） 世界知识产权组织（2）
IPC部 B（4）
IPC大类 B82（4） C01（4） C25（4）
H01（2）
IPC小类 B82Y（4）
IPC B82Y030/00（4）
发明人 KOKUNI T（2） NAGATA T（2） OGUNI T（2）
OSADA T（2） TAKEUCHI T（2）
公开年 2013（2）
申请年 2012（4）
专利权人 SEMICONDUCTO.（2）

Formation of band-gap in graphene raw material used for e.g. light reception and light-emitting devices, involves forming graphene film on surface having nanosize porous holes active on graphene.

HASUO T, KUBOTA H, FUKUYAMA H, HOMMA Y, SAITO S, MASUDA H

Making high-strength composite comprises e.g. plating conducting surface on substrate, electroplating flat graphene flakes onto surface from carrier fluid suspension of graphene flakes, removing plated substrate from vessel and drying.

BULLINGTON J A, STOLTZ R A, BULLINGTON J, STOLTZ R

Manufacturing method for graphene-coated object, involves heating graphene oxide deposited on uneven surface of object in vacuum or reducing atmosphere to reduce graphene oxide to graphene, after immersing object in graphene oxide solution.

OGUNI T, OSADA T, TAKEUCHI T, KOKUNI T, NAGATA T

Object useful as electrode of lithium-ion secondary battery, in electric device e.g. mobile phones, lighting devices and personal computers, and to manufacture graphene, comprises uneven surface and graphene layer over the uneven surface.

OGUNI T, OSADA T, TAKEUCHI T, NOMOTO K, KOKUNI T, NAGATA T