国家/地区 中国（5）
IPC部 C（5） H（4） B（2）
IPC大类 C01（5） C25（5） C23（4）
H01（4）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人
公开年
申请年
专利权人

Preparing graphene nanowire film useful for thin film transistor array, comprises e.g. preparing anodized aluminum oxide template, depositing metal catalyst layer, dispersing in film forming solution, applying membrane liquid and drying.

XIA Y, ZHUO E

Preparing large size and high quality graphene based on self-limiting nucleation growth comprises e.g. polishing the copper foil, depositing and covering with nickel metal, adding the covered nickel metal copper foil into growth chamber.

ZHANG A, YANG M, CHEN J, ZHAO Y, WEI W, ZHANG X

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Method for manufacturing electrical conductor, involves depositing boundary cappings on defects of graphene layer to inhibit corrosion of the substrate layer at defects and depositing boundary capping material on substrate layer.

LIU Z, ZHENG M, MARTENS R I, MARTENS R