国家/地区 中国（2） 美国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C25D009/04（5）
发明人
公开年 2018（3） 2017（2）
申请年 2017（5）
专利权人

Preparing metal oxide-doped graphene used for field effect transistor, and in p-type semiconductor, comprises e.g. depositing graphene on first substrate, and transferring deposited graphene onto second substrate to form graphene electrode.

KYU K E, SOO P C

Preparation method of three-dimensional network structure zinc oxide/erbium-graphene oxide film, involves using potassium nitrate or sodium nitrate, concentrated sulfuric acid, crystalline flake graphite, and potassium permanganate.

QIN X, LU L, WANG L, SHAO G, SONG A

Oxygen generation catalyst useful in an electrochemical or photoelectrochemical device, comprises a graphene oxide layer, and a nickel-iron layered double hydroxide layer supported on the surface of the graphene oxide layer.

YAMADA A, MIKOSHIBA S, ONO A, KUDO Y, TAMURA J, KITAGAWA R, TSUTSUMI E, YAMAGIWA M, SUGANO Y, MOTOSHIGE A, KANNO Y, TAMURA A

Manufacture of graphene pellets used in e.g. electrode, involves forming nickel pellets from nickel powder, exposing nickel pellets to hydrocarbon, and etching nickel using graphene with acid resulting in graphene pellet.

ALVAREZ N, DEARMOND D, MALIK R, SHANOV V N, ZHANG L

Preparation of metal oxide/graphene composite material involves preparing composite material using graphite rod and metal sheet as two electrodes in alkali electrolyte under action of alternating current, washing, filtering, and drying.

YING M, HOU C, LI F, CHEN Z, CHEN M, HE B, ZHOU M