国家/地区 中国（3）
IPC部 C（3）
IPC大类 C25（3） C23（2）
IPC小类 C25D（3）
IPC C25D003/56（3）
发明人 WANG L（3）
公开年
申请年
专利权人

Preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film used in preparation of Schottky junction stacked radiation cell, involves preparing nickel chloride film, and putting graphene/nickel chloride/graphene film in vacuum environment for reduction treatment.

WANG X, WANG L, CHEN Z, YANG Y, ZHANG J, SU C, FENG H, LI P, WU W, LUO T, ZHOU C

Prevention of deposition of reactants and by-products in metal-organic chemical vapor deposition reaction chamber by electrochemically polishing component part, depositing catalytic reaction layer, protecting and depositing graphene layer.

FANG C, JIN K, LIU X, WANG L, YANG C, ZHANG L, ZHANG Y

Preparing graphene film material having improved thermal conductivity and corrosion resistance involves degreasing aluminum substrate, and immersing it in zinc solution, and washing with water, and processing zinc plated material for nickel.

CHEN J, CHEN Y, FAN H, HU L, HUANG Y, LI Q, WANG H, WANG L, WU Q, YANG G, CHEN Z