国家/地区 美国（3）
IPC部 C（3）
IPC大类 C25（3） C01（2）
IPC小类 C25D（3）
IPC C25D003/44（2）
发明人 LEE C（3）
公开年
申请年
专利权人

Manufacturing aluminum nitride used as packaging substrate of semiconductors, involves heating electrolyte comprising choline chloride, urea, aluminum chloride, boric acid and ascorbic acid, applying operating current to electroplate aluminum on workpiece, and annealing aluminum on the workpiece.

CHUNG C, LEE C, PENG K, KUNZENG P, LEE C Y, ZHONG Q

Formation of complex plating film used in electronic material, involves adding graphene-coated metal powder to plating solution, and forming plating film by performing electric plating in solution to which metal powder is added.

SUH S, SONG Y, PARK J, KIM T, SON H, SHIN J, LEE M, LEE J, LEE C, CHO Y, BAEG S, AHN B, YUN S

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R