国家/地区 美国（5）
IPC部 B（5）
IPC大类 C01（5） C30（5） B01（3）
H01（3） C23（2）
IPC小类 C30B（5）
IPC C01B031/04（4） C30B029/02（4） C01B031/02（2）
C23C016/26（2） C30B029/64（2）
发明人
公开年 2015（5）
申请年 2014（5）
专利权人

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Manufacture of ordered graphene structure used for multitouch capacitive panel, involves exposing substrate to laser beam in presence of carbon source and moving substrate or laser beam relative to other, or decreasing laser beam power.

OEZYILMAZ B, TOH C T

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Composition for electrode used for battery comprises carbonaceous material consisting of graphene and reduced graphene oxide and sodium ions.

SINGH G, DAVID L