国家/地区 中国（5）
IPC部 C（5）
IPC大类 C30（5）
IPC小类 C30B（5）
IPC C30B025/08（5）
发明人 SUN H（2） XU X（2）
公开年 2021（4）
申请年 2021（5）
专利权人 SUN H（2）

Epitaxially growing uniform graphene more than six inches on silicon carbide substrate, comprises grinding, polishing, and cleaning silicon surface of silicon carbide wafer, vacuumizing high-temperature furnace chamber, heating, feeding argon gas and naturally cooling to room temperature.

GUO F, LI X, XU X, SHAO C, CHEN X

Elastic air-tight piece comprises elastic air-tight piece set at outlet end of preparation chamber and hermetically connected with outlet end of preparation chamber, where elastic air-tight piece is provided with conveying belt assembly.

SUN H

Preparing double-layer single crystal graphene, involves placing carbon-containing compound and copper foil in corundum box, introducing argon and hydrogen, increasing flux of hydrogen, annealing copper foil, introducing methane, after growing double-layer single crystal graphene, naturally cooling.

XU X, LIANG Z, ZENG F, WANG R, TANG Z

Vapor-deposited graphene layer growth preparation device comprises high-vacuum sealing plug-in valve transversely arranged on upper part of sealed cavity near top, thermal field base fixedly installed at bottom of sealed cavity.

ZHAO B, FU S, ZHANG H

Preparation chamber of scale preparation device of CVD deposited graphene, has main chamber outlet end and auxiliary chamber inlet end located below liquid level of liquid airtight tank, auxiliary chamber includes elastic airtight component.

SUN H