国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC C30B025/18（2）
发明人 ZHANG J（4）
公开年 2022（2） 2023（2）
申请年 2022（4）
专利权人

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

Preparing enhanced reduction graphene oxide/carbon nanotube/pyrolytic carbon composite material involves subjecting graphene oxide/carbon nanotube foam to high-temperature thermal reduction to obtain reduced graphene oxide/carbon nanotube foam.

SHAO D, WANG S, LI Y, YANG J, JIA X, SONG H, WANG C, WEI P, ZHANG J, DING S, FENG L

Phased array antenna useful for producing MPCVD single diamond, comprises molybdenum support provided with the driving mechanism for driving the circular plate and the temperature insulation plate provided with the cooling mechanism for cooling outside the reaction preparation tank.

HU F, ZHANG J

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J