国家/地区 中国（3）
IPC部 C（4）
IPC大类 C30（4） C23（2）
IPC小类 C30B（4）
IPC C30B029/02（4） C30B023/00（2） C30B025/00（2）
C30B025/18（2）
发明人 ZHANG X（4）
公开年
申请年
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（4）

Preparation of double-layer torsion angle graphene monocrystalline wafer, by annealing copper-nickel monocrystalline substrate in chemical vapor deposition furnace under gas atmosphere of argon and hydrogen to improve crystal quality, and growing under atmosphere of argon, hydrogen and methane.

XIE X, YU Q, ZHAO Y, ZHANG X

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H