国家/地区 中国（3） 美国（3） 日本（2） 世界知识产权组织（2）
IPC部 C（4） B（3）
IPC大类 C23（4） C30（4） C01（3）
B82（2）
IPC小类 C23C（4）
IPC C23C016/26（4）
发明人 WANG H（3） XIE X（3） DING G（2）
XIE H（2）
公开年 2017（2）
申请年 2015（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（4）

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X