国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/18（2） C30B029/02（2） C30B029/40（2）
发明人
公开年 2021（3）
申请年 2021（2） 
专利权人 UNIV PEKING（3）

Preparing single crystal graphene, comprises preparing single crystal graphene by chemical vapor deposition process, forming graphene nucleus on the substrate, and forming single crystal graphene on basis of graphene core.

WANG Y, LI Y, SUN L, LIU H, LIU Z

Growing single crystal gallium nitride film on arbitrary self-supporting substrate involves nitride deposition on any self-supporting substrate, transferring the two-dimensional material with single crystal hexagonal structure.

YANG X, SHEN B, LIU D, SHEN J, CAI Z, CHEN Z, MA C

Preparing two-dimensional single crystal material lamination with large size and interlayer corner comprises growing first and second two-dimensional single crystal material and introducing inert gas and reducing gas, heating and bonding.

LIU K, LIU C, WANG Q, GONG D, WANG E, YU D