国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C30B025/18（2）
发明人 ZHANG Z（3）
公开年 2016（2）
申请年
专利权人

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K

Preparation of two-dimensional tin graphene material involves carrying out epitaxial growth of monolayers or multi-atomic layer of (alpha)-tin crystal thin film on single crystal substrate and electron bombardment using atoms and ions.

LI Y, SONG Y, WANG S, ZHANG Z, ZHANG L

Method for preparation of epitaxial silicon carbide-graphene composite film, involves pre-treating substrate in chemical vapor deposition chamber, growing silicon carbide epitaxial layer, heating, decomposing and recombining structure.

ZHANG B, ZHANG X, ZHANG Z