国家/地区 中国（6） 美国（5） 世界知识产权组织（5）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/04（7）
发明人 DENG P（2） DING G（2） GUO H（2）
LEI T（2） XIE X（2） ZHANG K（2）
ZHANG Y（2）
公开年 2012（7）
申请年 2012（5）  2011（2） 
专利权人 CHINESE ACAD.（2） DING G（2） SHANGHAI INS.（2） UNIV XIDIAN（2）
XIE X（2）

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Three-dimensional graphene tube for use in e.g. solar cell, has diameter and length, in preset range, and has preset number of layers.

BI H, HUANG F, LIN T

Preparation of large-area graphene used for sealing gas or liquid, by vacuumizing cleaned silicon substrate in chemical vapor deposition system in presence of hydrogen, carbonizing, introducing propane to form carbide layer, and heating.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X