国家/地区 中国（2） 韩国（2） 美国（2）
IPC部 C（4） H（2）
IPC大类 C23（4） C30（4） C01（2）
H01（2）
IPC小类 C23C（4）
IPC C23C016/02（4）
发明人
公开年 2022（4）
申请年 2021（4）
专利权人

Substrate for forming semiconductor device, comprises graphene layer arranged on silicon surface of silicon carbide crystal substrate, epitaxial growth layer, and graphene layer arranged on silicon surface of epitaxial growth layer.

NORIYUKI M, TAKUJI M, MITSURU M, TAKAYASU O

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K