国家/地区 中国（2） 欧洲专利局（EPO）（2） 日本（2） 美国（2） 世界知识产权组织（2）
IPC部 C（3）
IPC大类 C23（3） C30（3） C01（2）
IPC小类 C23C（3）
IPC C23C016/26（3）
发明人
公开年 2021（3）
申请年 2020（3）
专利权人

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Multi-chamber semiconductor thin film epitaxy device comprises growth chambers and mechanical arm, where growth chambers have graphene and semiconductor material growth chamber, where graphene growth chamber used to grow graphene film.

GUO L, WEI T, RAN J, WANG J