国家/地区 美国（2） 世界知识产权组织（2）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B001/10（3）
发明人
公开年 2014（3）
申请年 2014（2） 
专利权人

Forming a graphene film on a silicon carbide material involves heating the silicon carbide material to a growth temperature, and exposing the silicon carbide material to a growth atmosphere comprising a halogen species.

SUDARSHAN T S, CHANDRASHEKHAR M S, RANA T

Graphene sheet for manufacturing electronic device, e.g. electrode or transistor, and display, e.g. organic light emitting diode (OLED), comprises regularly or irregularly patterned and thickness modulated structure on graphene surface.

KAYA I I, YANIK C, *YANIK CENK, *KAYA ISMET INONU

Preparing silicon carbide nanowhisker comprises uniformly mixing graphene and silicon powder, raising the mixture, sintering the mixture, cooling the sintered mixture and then calcining, and soaking calcined product in hydrofluoric acid.

KONG Q, LI X, CHEN C, LIU Z, CAI R