国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/00（3）
发明人
公开年 2019（3）
申请年 2019（3）
专利权人

Preparation of single crystal graphene for semiconductor material, involves annealing copper- and nickel-deposited substrate to obtain alloy substrate sample, oxidizing substrate sample, performing chemical vapor deposition, and cooling.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Method for growing large-area single crystal graphene, involves using nozzle corresponding to substrate pattern to carry out fixed point carbon source transportation and passing methane for fixed point nucleation for graphene growth.

LAN F, WANG Z, ZHANG S, DONG Z, HAO J

Growth method of multilayer graphene single crystal film by placing copper foil in hydrogen atmosphere, heating and annealing, keeping constant temperature in copper foil, and filling mixed gas of hydrogen gas, methane and argon gas.

LI X, SHEN C, QING F