国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/00（3）
发明人
公开年 2014（3）
申请年 2013（2） 
专利权人

Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Preparation of monocrystalline graphene involves performing primary heat treatment of metal substrate, growing monocrystalline graphene, etching, reducing density of graphene, growing graphene, etching and repeating growing and etching.

CHENG H, MA T, REN W

Preparation of multilayered single crystal graphene involves carrying out electrochemical polishing of copper substrate, washing, drying, placing in reaction chamber, evacuating, filling hydrogen, heating, filling methane, and heating.

SHI Y, HAO Y, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y