国家/地区 美国（5）
IPC部 C（5）
IPC大类 C30（5） C01（3） B82（2）
IPC小类 C30B（5）
IPC C30B025/10（5）
发明人 SHERRILL J V（2）
公开年 2023（2）
申请年 2016（2）  2022（2） 
专利权人 GEN GRAPHENE.（3）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Manufacturing two-dimensional materials, such as graphene, involves passing purge gases into gas confining space of reaction chamber, to purge gas confining space of oxygen, passing donor gas, moving carriers to pass donor gas to space, setting positive pressure in space, heating forming layers.

ERICKSON G E, SHERRILL J V

Apparatus for producing two-dimensional (2D) material e.g., graphene comprises carrier substrate having 2D surface, 2D sheet for growing 2D material, furnace which forms a tubular volume around the carrier substrate and sheet, and heater.

SHERRILL J V, ERICKSON G

Synthesis of graphene used in e.g. electronic applications, involves reacting drawn catalytic substrate with precursor gas containing hydrocarbon gas and hydrogen gas to form continuous single crystal graphene.

LIST F A, STEHLE Y Y, VLASSIOUK I V, SMIRNOV S N

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O