国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4） H01（3） C23（2）
IPC小类 C30B（4）
IPC C30B029/38（4）
发明人 FIMLAND B M（2） MUNSHI M（2） WEMAN H（2）
公开年 2021（4）
申请年 2020（3） 
专利权人 CRAYONANO AS（2）

Preparing silicon nitride single crystal involves providing silicon carbide substrate, and disposing multilayer graphene an insertion layer on silicon carbide substrate to obtain graphene/silicon carbide substrate.

WANG Y, XU Y, WANG J, XU K

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B