国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/18（3）
发明人 YANG J（3）
公开年 2022（2）
申请年 2022（2） 
专利权人

Reducing damage to substrate when using plasma-enhanced atomic layer deposition to grow thin film involves depositing oxide film on cleaned substrate using water/ozone source and metal source, and depositing nitride film using plasma source.

HU Y, ZHU X, TIAN F, YANG J, LIU H, QIU P, WEI H, ZHENG X, QIU H

Preparing quantum dots, comprises e.g. using two-dimensional materials to prepare two-dimensional material substrates, placing material in growth chamber, spraying raw material on surface of material, and subjecting raw material into adsorption, desorption, and growth on surface of material.

LIU F, WEI Z, YANG J, XIN K, LI L, DI S

Epitaxially growing large area gallium nitride used in field of semiconductor comprises growing graphene two-dimensional material layer on copper (111) single crystal substrate, epitaxially growing gallium nitride film and cooling gallium nitride film to room temperature.

MA Y, YANG J, KONG W