国家/地区 韩国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B029/40（3）
发明人
公开年 2021（2）
申请年 2019（2） 
专利权人

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

Manufacture of semiconductor substrate structure involves preparing intermediate structure by forming graphene layer on diamond wafer substrate, forming hexagonal-boron nitride layer on structure and forming gallium nitride epilayer.

LEE T, CHO S

Producing hexagonal boron nitride thin film useful for photoelectric device, light-emitting and light-receiving device, comprises forming hexagonal boron nitride thin film on graphene oxide layer by supplying e.g. boron-containing precursor.

KO K B, YOO B, HAN M, TRANVEITCUONG, HONG C