国家/地区 中国（2）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B033/02（3）
发明人
公开年 2015（3）
申请年 2014（2） 
专利权人

Regulating and controlling silicon carbide base epitaxial graphene electronic band gap comprises e.g. preparing epitaxy graphene sample, using SRIM software, using ion beam to silicon carbide base epitaxial graphene sample for irradiation.

FU G, QIN X, WANG F, ZHAO J

Preparation of highly crystalline graphene/hexagonal boron nitride with stacked structure comprises forming stack structure of graphene/hexagonal boron nitride, and carrying out heat treatment.

SHI D, WANG D, ZHANG G

Forming graphene single crystal domain on substrate, comprises contacting substrate with passivating gas to create low nucleation site density substrate, and contacting the resultant with working gas at first elevated temperature.

COLOMBO L, RUOFF R S, HAO Y