国家/地区 中国（3） 美国（2） 世界知识产权组织（2）
IPC部 B（7）
IPC大类 C30（7） C01（4） B01（3）
B32（3） C23（3） B82（2）
C09（2）
IPC小类 C30B（7）
IPC C30B029/02（4） B32B009/00（2） B82Y040/00（2）
C01B032/184（2） C01B032/186（2） C30B025/18（2）
发明人
公开年 2023（4） 2022（3）
申请年 2022（7）
专利权人

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Preparation of folding-resistant high-peeling aluminum-coated fabric involves coating coupling agent on etched surface of aluminum foil, coating conductive adhesive on coupling agent layer, pressing fabric on adhesive layer, and sewing.

CHEN Y, YE W, SUN Q, LONG X

Device used to conversion of feedstock to resultant material having higher degree of crystallinity than feedstock comprises constraining reservoir, electrodes, compression system, alternating current power source and electrical controller.

MANCEVSKI V, LUONG D X, COOKSEY T, WILLIAMS J, MAZOR E, ZHANG Z, JAY B

Method for preparing micro-nano materials comprise e.g. introducing sacrificial carrier into slurry containing raw materials and auxiliary agents, shaping and drying to form mixture, synthesizing preform to prepare porous body made of micro-nano materials, and performing dispersion operation.

LI Q

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S

Etching method of single-sided germanium wafer by coating photoresist on front, back and circumferential directions of germanium wafer respectively to form photoresist film, exposing photoresist film on front side, and developing.

HE Y, CHEN M, WANG Y

Synthesizing two-dimensional transition metal oxide layers by providing sputter chamber having inert atmosphere, depositing transition metal on substrate in sputter chamber, withdrawing substrate from chamber, placing substrate on pre-heated plate, and placing target substrate on ceramic plates.

DASH J K, ABZAL S M, KALYAN K, JANGA S L