国家/地区 美国（3） 中国（2） 欧洲专利局（EPO）（2） 日本（2） 韩国（2） 世界知识产权组织（2）
IPC部 B（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC B82Y030/00（2） B82Y040/00（2） C01B031/04（2）
C23C016/02（2） C23C016/26（2） C30B029/02（2）
C30B029/36（2）
发明人
公开年 2015（3）
申请年 2014（4）
专利权人

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Iron-based carbide nanocrystals-graphene nanobelt composite material used in e.g. hydrogen evolution catalysis, comprises bottom layer of silicon wafer, graphene nanobelt arrays on silicon wafer, and iron-based carbide nanocrystal.

DONG J, FAN X, GUO X, LIU B, LI C, LIU Q

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, involves subjecting sample to ex situ functionalization step and sample having hydroxyl-terminated surface to in situ treatment cycle.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G