国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4） H01（3） C23（2）
IPC小类 C30B（4）
IPC C30B029/40（3） C30B025/18（2） C30B029/16（2）
发明人 ZHANG L（2）
公开年 2023（4）
申请年 2023（4）
专利权人

Reducing damage to substrate when using plasma-enhanced atomic layer deposition to grow thin film involves depositing oxide film on cleaned substrate using water/ozone source and metal source, and depositing nitride film using plasma source.

HU Y, ZHU X, TIAN F, YANG J, LIU H, QIU P, WEI H, ZHENG X, QIU H

Preparing wafer-sized gallium oxide film comprises e.g. cleaning gallium metal droplets to remove surface oxide film, placing pure gallium droplet on surface of heated substrate, and roll gallium droplet with extrusion rod coated with viscoelastic or rubbery polymer material on surface.

ZHANG L, TU R, LU P, ZHANG S, LI B

Crucible used for growing two-dimensional semiconductor material, comprises crucible cover comprising cover plate and cover side wall, and crucible base comprising bottom plate and bottom side wall.

ZHANG L

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X