国家/地区 中国（4） 韩国（3） 美国（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/194（6）
发明人 ZHANG S（2）
公开年 2021（3） 2022（3）
申请年 2021（6）
专利权人

Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.

HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Preparation of new metal and nonmetal materials involves forming metal and non metal macromolecule materials of preset purity and particle size, breaking bonds to form small molecule materials, self-forming using double-forming catalyst, vibrating re-formed materials and recombining molecules.

LIN D

Structural design of two-dimensional adjustable ferroelectric polarization material based on iron intercalated graphene oxide by simulating construction of iron intercalated graphene oxide crystal structure, performing structure optimization, applying strain and randomly distributing iron ions.

DONG Z, ZHANG S, ZHONG C, GENG C

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Preparing anode composite material useful in lithium ion battery comprises heating anode material coated by catalytic material under carbon source gas atmosphere, generating carbon nano-tube on anode material and adding graphene for coating.

WANG Y, ZHANG S, WANG Z, MA J, BAI Y