国家/地区 日本（3）
IPC部 C（3）
IPC大类 C30（3） H01（2）
IPC小类 C30B（3）
IPC C30B025/18（3）
发明人
公开年 2021（3）
申请年 2020（3）
专利权人

Manufacturing semiconductor by forming mask layer which covers substrate, laminating graphene layer on surface of substrate, and making surface of graphene layer crystal-grow a semiconductor crystal.

NARUTSUKA S

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM