国家/地区 欧洲专利局（EPO）（4）
IPC部 B（4）
IPC大类 B82（4） C01（4） C30（4）
B32（3） H01（3） C23（2）
IPC小类 B82Y（4）
IPC B82Y040/00（4）
发明人 VEERASAMY V（2） VEERASAMY V S（2）
公开年 2011（3）
申请年 2009（4）
专利权人 GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2）

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W