国家/地区 美国（5） 世界知识产权组织（3） 中国（2） 欧洲专利局（EPO）（2） 日本（2） 韩国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C30B（5）
IPC C01B031/04（4） C30B029/02（4） C23C016/26（3）
C23C016/46（2） C30B025/02（2） H01L021/02（2）
H01L029/16（2）
发明人
公开年 2015（4）
申请年 2014（5）
专利权人

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Composition for electrode used for battery comprises carbonaceous material consisting of graphene and reduced graphene oxide and sodium ions.

SINGH G, DAVID L

Formation of graphene-boron nitride interface used in e.g. formation of graphene-boron nitride heterostructure, involves exposing ruthenium substrate to ethylene, and sequentially exposing resultant substrate to oxygen and borazine.

SUTTER P W, SUTTER E A

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L