国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC C30B025/18（4） H01L021/02（3） C01B032/186（2）
C23C014/06（2） C23C014/34（2） C23C016/01（2）
C23C016/02（2） C23C016/26（2） C23C016/34（2）
C23C028/00（2） C30B029/02（2）
发明人
公开年 2016（3）
申请年 2016（4）
专利权人

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z