国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC C23C014/06（3） C30B025/18（3） H01L021/02（3）
C23C014/35（2） C23C016/02（2） C23C016/26（2）
C30B029/40（2） H01L021/205（2）
发明人 HAO Y（3） NING J（3） WANG D（3）
ZHANG J（3）
公开年
申请年 2012（2） 
专利权人 UNIV XIDIAN（4）

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y