国家/地区 中国（7）
IPC部 C（7）
IPC大类 C30（7） H01（5） B82（3）
H05（3） B22（2） C01（2）
C23（2）
IPC小类 C30B（7）
IPC C30B029/02（4） B82Y030/00（3） B82Y040/00（3）
C30B025/18（3） B22F001/00（2） B22F009/24（2）
C01B031/02（2） C01B031/04（2） C30B025/02（2）
C30B029/52（2） C30B029/60（2） C30B033/00（2）
H05K009/00（2）
发明人 MA S（2） MA T（2） PAN G（2）
SUN G（2）
公开年 2014（7）
申请年 2013（3）  2014（3） 
专利权人 UNIV BEIJING.（2） UNIV BEIJING.（2）

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Cubic phase cobalt/graphene composite material used as absorbing material, has monocrystalline structure, and comprises metal cobalt as face-centered cubic structure, and graphene as sheet-shaped structure.

MA S, MA T, PAN G, SUN G

Hexagonal phase cobalt-graphene polycrystalline composite material used as shielding material has stacked closely-packed cobalt and graphite sheets.

MA S, MA T, PAN G, SUN G

Deposition mask for forming patterned deposition material of e.g. organic light emitting display device, has carbon layer formed on surfaces of body portion and including carbon graphene, where openings are penetrated through surfaces.

HAN J

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching involves placing silicon carbide substrate in metal organic chemical vapor deposition reactor and adding ammonia.

HAO Y, NING J, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y