国家/地区 韩国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C30B（3）
IPC C30B029/16（2） C30B029/64（2）
发明人
公开年 2018（3）
申请年 2017（2） 
专利权人

Growing thickness of reduced graphene oxide comprises dispersing reduced graphene oxide powder, adding metal nano powder to obtain dispersed mixture, drying dispersed mixture, and heating.

JEE Y H, LEE S H, KIM K W

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Manufacture of vanadium dioxide nanostructure involves heating quartz tube containing vanadium dioxide nanopowder and graphene layer-based substrate, depositing vanadium dioxide vapor on graphene layer, and growing nanostructure.

KIM K C, OH S A, CHAE Y E, YOON J H, KIM J I