国家/地区 美国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4） B82Y030/00（3） B82Y040/00（3）
C23C016/26（3） C30B029/02（3） B82B003/00（2）
C03C017/22（2） C23C016/02（2） C30B025/18（2）
发明人
公开年
申请年 2013（2） 
专利权人

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Forming graphene layer on quartz substrate comprises melting portion of quartz substrate, diffusing a form of carbon into the melted portion to form carbon and quartz mixture and precipitating single or few layer graphene out of the mixture.

XU X, WEI D, YE P

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V