国家/地区 日本（3） 美国（3） 韩国（2） 世界知识产权组织（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B031/02（5）
发明人
公开年 2014（5）
申请年 2013（3）  2012（2） 
专利权人

Manufacture of single crystal graphene involves thermal decomposition of carbon source by guiding vaporized carbon source vapor with camphor to a heated substrate, and thermally decomposing the compound on the substrate surface.

SHARMA S, TANEMURA M, UMENO M, KALITA G

Nanosynthesis apparatus, useful for nanosynthesizing graphene, comprises outer tube having internal surface, inner tube partially disposed within outer tube, deposition fluid source in fluid communication with gap, and heater.

HART A J, POLSEN E

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Rolled copper foil used for manufacture of graphene for e.g. mercury-free fluorescent lamp, has specified ratio of maximum value for detection strengths occurring under specified conditions based on specific direct pole figure.

CHIBA YOSHIHIRO, CHIBA Y