国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B029/02（3） C30B025/18（2）
发明人 ZHAO X（3）
公开年 2017（2）
申请年 2016（3）
专利权人 UNIV SHANDON.（3） SHANDONG BEN.（2）

Preparing graphene on 6H-4H-silicon carbide metal composite substrate involves polishing 6H-4H-silicon carbide carbon surface, cleaning and cutting, placing in chemical vapor deposition furnace chamber and filling with argon.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Growing of large-sized monocrystalline graphene on silicon carbide substrate used for microelectronic device, involves polishing silicon carbide substrate, introducing e.g. argon, placing probe on substrate and growing graphene on substrate.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F