国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B029/02（3）
发明人 CHEN X（2）
公开年 2011（2）
申请年 2010（3）
专利权人

Growing graphene on silicon carbide substrate epitaxially involves adopting formation technology imaging substrate, on surface of substrate, forming graphic array, performing thermal decomposition to patterned substrate and forming graphene.

CHEN X, GUO L, JIA Y, LI K, LIN J, WANG G, WANG W

Growing graphene on big-diameter silicon carbide carbon surface involves polishing and cleaning silicon carbide wafer carbon surface, putting the wafer in graphite tray, pumping the degree of vacuum, and pouring high-purity argon.

HU X, XU X, CHEN X, WEI R

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V