国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4） H01（3）
IPC小类 C30B（4）
IPC C30B029/16（4）
发明人 HAO Y（2） MA P（2） NING J（2）
WANG D（2） ZHANG J（2）
公开年 2021（2） 2022（2）
申请年 2021（4）
专利权人 UNIV XIDIAN（2）

Transferring gallium oxide epitaxial layer based on van der Waals film comprises e.g. using chemical vapor deposition to make polycrystalline continuous graphene film, extending gallium oxide on graphene film and adhering thermal release adhesive tape to gallium oxide epitaxial layer upper surface.

HAO Y, MA P, ZHANG J, WANG D, CHEN D, NING J

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J

Structural design of two-dimensional adjustable ferroelectric polarization material based on iron intercalated graphene oxide by simulating construction of iron intercalated graphene oxide crystal structure, performing structure optimization, applying strain and randomly distributing iron ions.

DONG Z, ZHANG S, ZHONG C, GENG C

Graphene-based reusable zinc oxide single crystal substrate useful for preparing zinc oxide film comprises zinc oxide/graphene substrate including zinc oxide single crystal substrate and at least two layers of graphene.

YE Z, WANG P, PAN X, WANG N