国家/地区 中国（5）
IPC部 C（5）
IPC大类 C30（5） H01（3） C23（2）
IPC小类 C30B（5）
IPC C30B025/18（5）
发明人
公开年 2014（5）
申请年 2014（3）  2013（2） 
专利权人

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Stripping graphene thin film involves utilizing surface graphene thin film with substrate, growing graphene film directly on substrate or epitaxially growing material, and peeling off epitaxial material to obtain desired product.

DUAN R, LI J, SUN L, WANG G, WANG J, WEI T, ZHAO Y

Gallium nitride crystals preparation involves preparing graphene nanosheet and dispersing nanosheet in solution of N,N-dimethylformamide or N-methyl pyrrolidone to obtain oxidized graphene nanosheet, which is later dispersed in water.

TIAN Y, WU Y, LI X, ZHANG L, DAI Y, SHAO Y, HAO X, HUO Q

Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching involves placing silicon carbide substrate in metal organic chemical vapor deposition reactor and adding ammonia.

HAO Y, NING J, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y