国家/地区 欧洲专利局（EPO）（4）
IPC部 B（4）
IPC大类 C01（4） C30（4） C23（2）
H01（2）
IPC小类 C01B（4）
IPC C01B031/04（4） C30B029/02（4） C01B031/02（2）
C01B032/182（2） C01B032/184（2） C23C016/26（2）
C30B029/64（2）
发明人
公开年 2015（3）
申请年 2014（4）
专利权人

Preparation of graphene, involves mixing inorganic salt with phthalocyanine material uniformly, splitting and separating under protecting gas to obtain highly plane oriented graphene material.

SUN X, WANG Y, DONG G

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V