国家/地区 世界知识产权组织（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/184（3） C01B032/956（2） C30B001/10（2）
发明人 IACOPI F（3）
公开年
申请年
专利权人 UNIV SYDNEY .（3） UNIV GRIFFIT.（2）

Forming dry electrode for measuring electrophysiological readings, by growing silicon carbide film on silicon substrate, depositing metals on surface of silicon carbide film, heating to react metal with silicon of silicon carbide film to form carbon and silicide and carbon forms graphene layer.

IZZO K A, AMJADI POUR M, FAISAL S N, LIN C, IACOPI F

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V