国家/地区 美国（2）
IPC部 C（3）
IPC大类 G01（3）
IPC小类 G01J（3）
IPC G01J005/20（3）
发明人
公开年 2021（3）
申请年 2021（2） 
专利权人

Preparation method of a graphene-CMOS monolithic integrated detector chip, involves depositing isolation layer on surface of CMOS integrated circuit, and etching through hole in isolation layer to fill metal.

CHEN H, HUANG Y, ZHANG H, CHENG C, CHEN R, HUANG B

Composite useful in photoelectric device, thermal sensing device and electronic device for sensing heat or infrared light, comprises block copolymer including e.g. alkyl-based first structural unit, and polyvalent metal ion.

CHOI Y, KIM T H, WANG L, VINCENZO C, ZHUN Z, CHIARA D, DARAIO C, ZHOU Z, COSTANZA V, CHOI Y S

Infrared photodetector has mesa on substrate and comprising layer of amorphous silicon for amplifying photocurrent, layer of long wave infrared radiation absorbing material for producing photocurrent, and passivation layers.

LO Y, ZHOU J, MIAH M A R, ZHANG Y