国家/地区 美国（5）
IPC部 C（5）
IPC大类 C01（5） C23（5） H01（5）
B82（4） B32（3）
IPC小类 C01B（5）
IPC C23C016/01（5）
发明人 CHOI J（2）
公开年 2012（2）
申请年 2011（2） 
专利权人 SAMSUNG ELEC.（2）

Silicon dioxide substrate based graphene transparent conductive film manufacturing method, involves forming graphene transparent conductive film on upper part of metal substrate to form substrate, and etching metal substrate.

SHI Y

Graphene sheet useful in a transparent electrode, a solar cell, a conductive thin film, a display device, a hydrogen storage medium and an electrical device, comprises intercalation compound comprising organic compound, and graphene layers.

CHOI J

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z